Dr. Arman Rashidi

Arman is currently a Postdoctoral Scholar at the Materials Department at the University of California Santa Barbara (UCSB).  Before joining UCSB, he was a Postdoctoral Fellow at the Center for High‐Technology Materials (CHTM) at the University of New Mexico (UNM) where he was the Principal Investigator of a project funded by Facebook Technologies to study carrier dynamics in microLEDs for AR/VR applications. He earned his Ph.D. at UNM in Feezell’s group (2018), focused on nonpolar and semipolar GaN LEDs for visible-light communication and solid-state lighting. His other areas of work at UNM included MOCVD growth, fabrication, and characterization of III‐nitrides devices such as high‐speed microLEDs and superluminescent diodes; vertical‐cavity surface‐emitting lasers; and p-n diodes for power electronics. Before coming to the U.S., he earned his B.Sc. and M.Sc. degrees in Electrical Engineering from Shiraz University (Iran), in 2012 and 2014, respectively. 

Arman’s current research interests at UCSB are the MBE growth of the Dirac semimetal Cd₃As₂ for the development of next-generation THz transistors and their fabrication and characterization. He further plans to study the topological properties of the Cd₃As₂ thin films at low temperatures. Arman’s other interest in our lab is the superconductivity of SrTiO3 films grown by MBE. A list of his publications can be found at his Google Scholar account.